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 P-Channel MOSFET 60V 27A FQP27P06 TO-220
P-Channel MOSFET 60V 27A FQP27P06 TO-220
MPN :
SKU : P-MOSFET27A-C64
Brand :Megatronics.pk
Stock : 174pcs
Price:PKR 100.00
Click on the following link for product video demo presentation. https://youtu.be/sIjLQkMf-NM

Package Type: TO-220

Transistor Type: P Channel
Max Voltage Applied From Drain to Source: -60V
Max Gate to Source Voltage Should Be: ±20V
Max Continues Drain Current is : -27A
Max Pulsed Drain Current is: -108A
Max Power Dissipation is: 120W
Max Drain to Source Resistance in ON State (RDS on): 0.07O
Max Storage & Operating temperature Should Be: -55 to +175 Centigrade

FQP27P06 is a P Channel MOSFET available in TO-220 transistor package. This MOSFET is built using DMOS technology which ensures minimum RDS(on) resistance, better switching capability,  and hold out against high energy pulses. The MOSFET is primarily designed for applications such as DC to DC conversions, efficient switching of loads in battery operated and portable circuit designs. Additionally it can also be used in wide variety of other applications which we will discuss the next topics of this article.


The MOSFET has many features and benefits such as fast switching which makes ideal to use in applications where fast switching is a crucial requirement. It is 100% avalanche tested means it can withstand when and provide stable performance even when its drain to source voltage exceeds to its max limits. The maximum junction temperature of 175°C makes it capable to perform good when its temperature is high as compare to the other MOSFET which has maximum junction temperature 150°C or less. Other features of the transistor are low gate charge, enhanced dv/dt ratings, low Crss etc.

Looking at the specs of the transistor the maximum drain to source voltage is -60V, the max continuous drain current is -27A, max pulsed drain current is -108A, and maximum power dissipation is 120W.

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