GWT60H65DFB STGWT60H65DFB IGBT 650V 60A MOSFET transistor Parallel Diode Trench Gate Field-Stop


The GWT60H65DFB/STGWT60H65DFB is an IGBT that combines the efficiency of a MOSFET with the current handling capability of a bipolar, making it the ideal choice for high power applications such as power supplies, inverters, and motors.


One of the most notable features of this IGBT is its trench gate technology, which enables fast and efficient current switching, reducing switching losses and improving overall system efficiency.


Additionally, the GWT60H65DFB/STGWT60H65DFB features an integrated parallel diode, which provides an additional conduction path for current during switching, thereby reducing switching losses and improving device reliability.


Rated at 650V and 60A, this IGBT is capable of handling heavy loads with ease, ensuring stable and reliable performance at all times.


Whether you're building a renewable energy system, a motor control system, or a power inverter, the GWT60H65DFB/STGWT60H65DFB will provide you with the performance and reliability you need to take your projects to the next level.